| Autor: |
Wen-Chian Lai, Hsin-Chih Kuo, Shih-Chiao Huang, Chien-Chang Chou, Huey-Ru Chuang |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 European Microwave Conference (EuMC). |
| DOI: |
10.1109/eumc.2015.7345956 |
| Popis: |
This paper presents a W-band CMOS SPDT high isolation T/R switch fabricated in 90nm CMOS. The switch is designed by using series-shunt structure with body-floating technique to improve the insertion loss and linearity. To achieve high-isolation performance, the parallel inductor and leakage cancellation technique are adopted. The measurement results show that the designed switch has a good performance in the return loss, insertion loss and isolation in W-band 75–110GHz frequency band. Compared with reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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