Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

Autor:	H.-H. Vuong, H.-J. Gossmann, R. E. Ahrens, Conor S. Rafferty, T. Boone, F. C. Unterwald, D. C. Jacobson, P. M. Zeitzoff, H. S. Luftman
Rok vydání:	1995
Předmět:	Materials science Ion implantation Silicon chemistry Annealing (metallurgy) Superlattice Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Epitaxy Thermal diffusivity Ion
Zdroj:	Journal of Applied Physics. 77:3056-3060
ISSN:	1089-7550 0021-8979
Popis:	The effects of low‐dose ion implants with Si+, Ne+, and F+ on the transient enhanced diffusion of B in silicon after annealing at 900 °C for 30 min have been investigated. Processing conditions such as implant dose (3.5×1013 cm−2) and energy (30–60 keV) were chosen to simulate the lightly doped drain implant in a 0.35 μm complementary metal‐oxide‐semiconductor technology. An epitaxially grown B‐doping superlattice is used to extract directly depth profiles of average Si self‐interstitial concentration after processing. For Si+ the transient enhanced diffusion of B increases with the energy of the implanted ion. Ne+ implanted with the same energy as Si+ causes more transient enhanced diffusion, while Ne+ implanted with the same range as Si+ causes slightly less. Implantation of F+ enhances the B diffusivity considerably less than Si or Ne implantation. These effects were modeled using simulations of defect diffusion in the presence of traps. A trap concentration of (2.4±0.5)×1016 cm−3 gave good agreement i...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b0c0bbad3f26cec8ceabaa0573ab8158 https://doi.org/10.1063/1.358656 Zobrazit plný text záznamu