Bandfilling in metalorganic chemical vapor deposited AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well heterostructure lasers
| Autor: | R. Chin, Russell D. Dupuis, R. M. Kolbas, E. A. Rezek, P. D. Dapkus, Nick Holonyak |
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| Rok vydání: | 1978 |
| Předmět: |
Photoluminescence
Materials science business.industry General Physics and Astronomy Heterojunction Semiconductor device Chemical vapor deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Semiconductor laser theory law.invention Optical pumping Condensed Matter::Materials Science law Optoelectronics business Quantum well |
| Zdroj: | Journal of Applied Physics. 49:5392-5397 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.324494 |
| Popis: | Data are presented showing that quantum‐well (Lz∼200 A) AlxGa1−xAs‐GaAs‐AlxGa1−xAs heterostructures, grown by metalorganic chemical vapor deposition, can be operated as lasers on confined‐particle transitions over an unusually large range (Δλ≳1000 A). The bandfilling properties of these quantum‐well heterostructures, which can easily be excited to carrier densities as high as n≳1019/cm3, are described. Quantum‐well laser diodes (x∼0.5) are described that operate (300 K) from the Γ band edge to wavelengths as short as 7700 A (ΔE∼185 meV). Narrow photopumped samples (15–30 μm) are shown to operate (77 K) as lasers on clearly defined confined‐particle transitions from the band edge to 6980 A (ΔE∼270 meV). On samples from another wafer, laser operation has been observed to 6885 A (ΔE≡hν−Eg=293 meV). The photoluminescence spectra of these heterostructures extend well into the region of the recently determined L band minima of GaAs. |
| Databáze: | OpenAIRE |
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