Shock waves in binary oxides memristors
| Autor: | Shao Tang, Federico Tesler, Vladimir Dobrosavljevic, M. J. Rozenberg |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Shock wave Physics Binary number 02 engineering and technology Memristor 021001 nanoscience & nanotechnology 01 natural sciences Engineering physics law.invention Switching time Neuromorphic engineering law 0103 physical sciences Limit (music) Electronics Commutation 0210 nano-technology |
| Zdroj: | Spintronics X. |
| DOI: | 10.1117/12.2277977 |
| Popis: | Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report a new connection between the resistive switching and shock wave formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen ions that migrate during the commutation in insulating binary oxides may form a shock wave , which propagates through a poorly conductive region of the device. We validate the scenario by means of model simulations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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