High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation
| Autor: | Ainara Rodriguez, Santiago M. Olaizola, Miguel Ellman, Mikel Echeverría, Changsi Peng, I. Ayerdi, Noemí Pérez, T. Berthou, Yury K. Verevkin, Zuobin Wang |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Extreme ultraviolet lithography General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films law.invention Optics Resist law Multiple patterning Optoelectronics Stencil lithography X-ray lithography Photolithography business Next-generation lithography Maskless lithography |
| Zdroj: | Applied Surface Science. 255:5537-5541 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2008.07.201 |
| Popis: | High throughput and low cost fabrication techniques in the sub-micrometer scale are attractive for the industry. Laser interference lithography (LIL) is a promising technique that can produce one, two and three-dimensional periodical patterns over large areas. In this work, two- and four-beam laser interference lithography systems are implemented to produce respectively one- and two-dimensional periodical patterns. A high-power single pulse of ∼8 ns is used as exposure process. The optimum exposure dose for a good feature patterning in a 600 nm layer of AZ-1505 photoresist deposited on silicon wafers is studied. The best aspect ratio is found for a laser fluence of 20 mJ/cm2. A method to control the width of the sub-micrometer structures based on controlling the resist thickness and the laser fluence is proposed. |
| Databáze: | OpenAIRE |
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