Selective Emitter Silicon Solar Cells Without POCl3 Furnace Diffusion
| Autor: | Paviet-Salomon, B., Manuel, S., Gall, S., Monna, R., Slaoui, A., Vandroux, L., Hida, R., Dechenaux, S. |
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| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: | |
| DOI: | 10.4229/26theupvsec2011-2bv.1.47 |
| Popis: | 26th European Photovoltaic Solar Energy Conference and Exhibition; 1369-1371 This work aims at investigating phosphorus-doped silicon nitrides layers (SiN:P) as efficient dopant sources to replace the phosphorus silicate glass (PSG) as a subproduct of conventional POCl3 diffusion. 75 nm thick SiN:P layers using 50 sccm phosphine flow were deposited by plasma-enhanced chemical vapour deposition on ptype silicon substrates. Two doping techniques were then investigated: laser doping and thermal annealing. Wide doping ranges were obtained with both methods. Selective emitter solar cells were then processed using SiN:P layers as dopant source and laser doping to pattern the heavily-doped areas, while the lightly doped emitter was formed using thermal annealing. Cells efficiency is currently limited by an increased series resistance, but this selective emitter processing scheme appears to be very promising in realizing solar cells without POCl3 furnace diffusion step. |
| Databáze: | OpenAIRE |
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