Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures
| Autor: | K. Cico, Jan Kuzmik, K. Fröhlich, T. Lalinský, Alexandros Georgakilas, R. Stoklas, Dionyz Pogany, Dagmar Gregušová |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
business.industry
Annealing (metallurgy) Chemistry Schottky barrier Electrical engineering Leakage current reduction Condensed Matter Physics Electric contact Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metal Oxide semiconductor visual_art visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 47:790-793 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2007.01.010 |
| Popis: | We investigate electrical properties of Ni/Al2O3/GaN metal–oxide–semiconductor (MOS) structures having different pre-treatment of GaN surface by O2, Ar and NH3, combined with various temperature of annealing. MOS and reference Ni/GaN Schottky contact are characterized using current–voltage and capacitance–voltage methods. MOS structures compared with the Schottky contact ones show leakage current reduction for all types of processing, from 3 to 5 orders of magnitude in reverse direct. We observed substantial influence of the pre-treatment on electrical parameters of MOS structures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect