Experimental study of carrier transport in ultra-thin body GeOI MOSFETs

Autor:	Koji Kita, Akira Toriumi, T. Nishimura, Lee Choonghyun, R. Ifuku, Toshiyuki Tabata, Kosuke Nagashio, Dan Dan Zhao
Rok vydání:	2011
Předmět:	Ultra thin body Crystallinity Materials science business.industry Significant difference MOSFET Electrical engineering Optoelectronics Degradation (geology) business
Zdroj:	IEEE 2011 International SOI Conference.
DOI:	10.1109/soi.2011.6081794
Popis:	We have investigated carrier transport properties in ultra-thin body (UTB) Ge-on-Insulator (GeOI) MOSFETs for the first time. Both n- and p-channel MOSFET operation fabricated on 9 nm GeOI has been demonstrated. In addition, a significant difference of Ge crystallinity in the front-channel from that in back-one is reported to explain the mobility degradation in UTB region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b04f9048884ef2ae33f2ab392ebc968a https://doi.org/10.1109/soi.2011.6081794 Zobrazit plný text záznamu