Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry
| Autor: | Devki N. Talwar, Ting Mei, Zhe Chuan Fang, Deng Xie, Jen–Hao Song, Chee-Wee Liu, Yi Liu, Zhi Ren Qiu, Jow-Lay Huang |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Aluminium nitride Analytical chemistry Diamond Bioengineering Dielectric engineering.material Condensed Matter Physics Buffer (optical fiber) chemistry.chemical_compound Diamond substrate chemistry Boron doping Materials Chemistry engineering Spectroscopic ellipsometry Dielectric function Electrical and Electronic Engineering |
| Zdroj: | International Journal of Nanotechnology. 12:97 |
| ISSN: | 1741-8151 1475-7435 |
| DOI: | 10.1504/ijnt.2015.066197 |
| Popis: | Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co–sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents ≤3%, however, do not cause appreciable changes in its direct bandgaps. |
| Databáze: | OpenAIRE |
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