Resistive Switching of Memristors Based on (Co40Fe40B20)x(LiNbO3)100 – x Nanocomposite with a LiNbO3 Interlayer: Plasticity and Time Characteristics
| Autor: | Andrey V. Emelyanov, A. A. Minnekhanov, Sergey Nikolaev, V. V. Rylkov, A. V. Sitnikov, A. N. Matsukatova, A. S. Vedeneev, K. Yu. Chernoglazov, V. A. Levanov, K. E. Nikiruy, A. S. Bugaev |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Resistive touchscreen Radiation Nanocomposite Materials science Alloy Analytical chemistry 020206 networking & telecommunications 02 engineering and technology Plasticity engineering.material Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Metal Ferromagnetism visual_art Torr 0103 physical sciences Electrode 0202 electrical engineering electronic engineering information engineering visual_art.visual_art_medium engineering Electrical and Electronic Engineering |
| Zdroj: | Journal of Communications Technology and Electronics. 65:1198-1203 |
| ISSN: | 1555-6557 1064-2269 |
| DOI: | 10.1134/s1064226920090077 |
| Popis: | The resistive switching (RS) of metal/nanocomposite/metal (M/NC/M) memristive structures based on the (Co40Fe40B20)x(LiNbO3)100 – x nanocomposite with a ferromagnetic alloy content х ≈ 8–20 at % is studied. The structures were synthesized by ion beam sputtering with an increased oxygen content (≈2 × 10–5 Torr) at the initial stage of NC growth, as a result of which a thin (15–18 nm) LiNbO3 layer appears at the bottom electrode. It is found that the structures have multilevel character of RS (at least four levels) with the retention time of the emerging resistive states of more than 104 s and demonstrate the possibility of the resistive states change according to biosimilar rules such as spike-timing-dependent plasticity (STDP). Unusual kinetics of RS to the low-resistance state was found: RS occurs with a delay of about 70 μs; the RS time in this case reaches ~5 ns, and the energy consumption for switching is ~1 nJ. |
| Databáze: | OpenAIRE |
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