Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching

Autor: Yana Krivoshapkina, Diana Nechepurenko, Claudia Lenk, Steve Lenk, Ahmad Ahmad, Mervyn Jones, B. E. Volland, Tzvetan Ivanov, Zahid A. K. Durrani, Marcus Kaestner, Martin Hofmann, Chen Wang, Mathias Holz, Alexander Reum, Ivo W. Rangelow
Rok vydání: 2018
Předmět:
Zdroj: Microelectronic Engineering. 192:77-82
ISSN: 0167-9317
DOI: 10.1016/j.mee.2018.01.022
Popis: Building low-power and high-density circuits requires new devices, which can be based for example on single electron effects. Single electron transistors (SET), which can operate at room temperature (RT), are candidates with high potential for the post-CMOS era. However, their fabrication relies typically on a statistical fabrication of quantum dots or positioning of nanoparticles or molecules between predefined electrodes. These methods hamper a scaled-up fabrication of RT-SETs. Here, we present a route for reproducible fabrication of RT-SETs on the basis of field-emission scanning probe lithography (FE-SPL) and cryogenic reactive ion etching. Due to the unique capabilities of our FE-SPL tool, enabling pre- and post-inspection of features, highly reliable patterning and precise feature alignment are obtained. The fabricated devices exhibit single electron effects at RT. A combination of this method with nanoimprint lithography would enable a high throughput and reproducible way of RT-SET fabrication. Display Omitted Field-emission scanning probe lithography is a single digit nano-resolution structuring method.Cryogenic reactive ion etching enables anisotropic transfer of high aspect ratio nano patterns.Reproducible manufacturing of RT-SETs is empowered by FE-SPL combined with cryo-RIE.
Databáze: OpenAIRE