Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs
| Autor: | Kenta Noguchi, Kenji Sugimoto, Yasuo Ishimaru, Tadaaki Morimura, Yasuo Sakaide, Hiroaki Asai, Isamu Nashiyama, Yuji Okazaki, Kensuke Shiba |
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| Rok vydání: | 2014 |
| Předmět: |
Nuclear reaction
Nuclear and High Energy Physics Materials science business.industry Electrical engineering Nuclear Energy and Engineering Lattice (order) MOSFET Physics::Atomic and Molecular Clusters Optoelectronics Power semiconductor device Neutron Electrical and Electronic Engineering Power MOSFET Nuclear Experiment business Single event burnout Voltage |
| Zdroj: | IEEE Transactions on Nuclear Science. 61:3109-3114 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | SEB tolerance of SiC power MOSFETs against terrestrial neutrons is studied. It is shown that the failure probability increases exponentially with applied voltage and is several orders of magnitude lower than that of a Si MOSFET. The energetic secondary carbon atoms generated by the nuclear reactions and the collisions between the terrestrial neutrons and the lattice atoms of SiC devices may play important role in the SEB triggering mechanism in SiC power devices. |
| Databáze: | OpenAIRE |
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