Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates
| Autor: | C. M. Sotomayor Torres, J.L. Merz, P.D. Wang, N. N. Ledentsov, V. M. Ustinov, P. S. Kop’ev |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Photoluminescence
Condensed Matter::Other Chemistry Exciton Binding energy Heterojunction General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Condensed Matter::Materials Science symbols.namesake Stokes shift Excited state Materials Chemistry symbols Photoluminescence excitation Atomic physics Biexciton |
| Zdroj: | Solid State Communications. 100:763-767 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/s0038-1098(96)00497-8 |
| Popis: | We studied magneto-optical properties of ultra-thin InAs GaAs heterostructures deposited on GaAs (311)A surfaces. Sharp heavy- and light-hole exciton resonances, as well as the features due to exciton excited states are observed in photoluminescence (PL) and photoluminescence excitation (PLE) spectra. No Stokes shift between heavy-hole exciton peaks in PL and PLE spectra is found. From magneto-PLE spectra, exciton binding energy is measured to be 12 ± 1 meV, i.e. three times higher than the surrounding GaAs matrix and ten times higher than the bulk InAs. We suggest the model of lateral confinement in monolayer InAs which enhances the exciton binding energy and suppresses the in-plane exciton transport. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect