TiSi2 Integration in a Submicron CMOS Process : II . Integration Issues
| Autor: | N. Brun, J. ‐P. Gonchond, A. Kalnitsky, A. Brun |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
inorganic chemicals
Materials science Renewable Energy Sustainability and the Environment chemistry.chemical_element Nanotechnology Dielectric Condensed Matter Physics Engineering physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials CMOS chemistry Materials Chemistry Electrochemistry Redistribution (chemistry) Cmos process Boron |
| Zdroj: | Journal of The Electrochemical Society. 142:1992-1996 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2044229 |
| Popis: | Issues associated with TiSi 2 integration in a submicron complementary metal oxide semiconductor process are investigated. These include dielectric consumption by the silicidation process as well as the effects of postsalicidation thermal processing on boron and arsenic redistribution in mono-Si and phosphorus redistribution in poly-Si. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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