Effects of Microwave Annealing on Ge pMOSFET with Hydrogen-treated Interfacial Layer

Autor:	C.C. Li, K.S.Chang Liao, W.F. Chi, Y.J. Lee, C.H. Fu, T.H. Su, T.M. Lee, M.C. Li, L.J. Liu
Rok vydání:	2015
Předmět:	Materials science Hydrogen chemistry Microwave annealing chemistry.chemical_element Composite material Layer (electronics)
Zdroj:	Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2015.n-1-4
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b02eabd61aca6f485548e4a748097790 https://doi.org/10.7567/ssdm.2015.n-1-4 Zobrazit plný text záznamu