The Electrophysical Properties of the Surface Layer of the Semiconductor TlBiSe2

Autor:	V. B. Bogevolnov, O. Yu. Shevchenko, I. M. Ivankiv, A. D. Perepelkin, A. N. Anagnostopoulos, A. M. Yafyasov
Rok vydání:	2002
Předmět:	Condensed matter physics business.industry Chemistry Fermi level Field effect Electron Condensed Matter Physics Electronic Optical and Magnetic Materials symbols.namesake Semiconductor Effective mass (solid-state physics) Impurity Dispersion relation symbols Surface layer business
Zdroj:	physica status solidi (b). 231:451-456
ISSN:	1521-3951 0370-1972
DOI:	10.1002/1521-3951(200206)231:2<451::aid-pssb451>3.0.co;2-v
Popis:	The field effect method in electrolytes is used for finding the electrophysical characteristics of the surface and the band parameters in the surface layers of the semiconductor TlBiSe 2 . In this paper the dispersion law and the effective mass of electrons of a conduction band, the concentration of ionized donor impurities, and the energy position of the Fermi level are defined. The experimental and theoretically calculated C(V) characteristics are compared.
Databáze:	OpenAIRE
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