How to secure the fabrication of Gallium Nitride on Si wafers
| Autor: | I. Bergoend, P. Gastaldo, Neil Anderson, M. Durand de Gevigney, Dario Alliata |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry 020208 electrical & electronic engineering Gallium nitride 02 engineering and technology 01 natural sciences Light scattering chemistry.chemical_compound chemistry 0103 physical sciences Automotive Engineering 0202 electrical engineering electronic engineering information engineering Process control Optoelectronics Wafer business |
| Zdroj: | International Symposium on Microelectronics. 2019:000444-000449 |
| ISSN: | 2380-4505 |
| Popis: | Process control solutions to secure the High-Volume Manufacturing of Gallium Nitride (GaN) devices for power applications are a must today. Unity recently developed and introduced on the market a total control solution that address both defectivity and metrology needs of GaN industry. Proprietary technologies like Phase Shift Deflectometry, darkfield inspection, confocal chromatic imaging and infrared interferometry are here explored to detect killer defects potentially affecting the gallium nitride wafer. More in detail, we characterized Gallium nitride on Silicon substrate before and after the fabrication of the final device and demonstrated how the fabrication process can be optimized. |
| Databáze: | OpenAIRE |
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