Thickness controlled nanostructure formation in RF sputtered WS2 thin film
| Autor: | Kai Zhang, Helmut Baumgart, Sangram K. Pradhan, Gilbert Kogo, Messaoud Bahoura, Pengtao Lin, Monee K. Roul, Kelsea Yarbrough |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Nanostructure Polymers and Plastics Silicon chemistry.chemical_element 02 engineering and technology Substrate (electronics) 010402 general chemistry 01 natural sciences Biomaterials symbols.namesake Planar Electrical resistivity and conductivity Thin film business.industry Metals and Alloys 021001 nanoscience & nanotechnology 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor chemistry symbols Optoelectronics 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Materials Research Express. 6:025002 |
| ISSN: | 2053-1591 |
| Popis: | Large area high quality WS2 nanostructured thin films are grown on silicon at 350 °C substrate temperature using RF sputtered technique. XRD results show that the films are highly crystalline in nature with the observation of significance of 002 peak located ~13°. FESEM images confirm that, the surface morphology can be modified easily by controlling the thickness and growth temperature of the films. Interestingly, the planar films slowly transform to nanostructure with increase of the film thickness which is also observed by AFM results. The observation of two strong Raman peak further conform the formation of WS2 film on Si substrate. Temperature dependent I–V curve behaves the films are pure semiconducting in nature and resistivity of the sample is decreased by increasing temperature. This exciting finding encourages WS2 based metal-chalcogenide is a potential candidate for its use in several semiconductor and other electronic devices. |
| Databáze: | OpenAIRE |
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