Resistive transition, polaron dynamics and scaling behavior in Fe doped SrTiO3

Autor:	Md. G. Masud, J. Sannigrahi, B. K. Chaudhuri, Arijit Ghosh
Rok vydání:	2013
Předmět:	Arrhenius equation Materials science Condensed matter physics Transition temperature Doping Dielectric Condensed Matter Physics Thermal conduction Polaron Variable-range hopping Electronic Optical and Magnetic Materials symbols.namesake symbols Charge carrier Electrical and Electronic Engineering
Zdroj:	Physica B: Condensed Matter. 414:60-66
ISSN:	0921-4526
DOI:	10.1016/j.physb.2013.01.012
Popis:	Temperature dependent electrical transport (ac and dc) and dielectric measurements have been performed with SrFexTi(1−x)O3 (0≤x≤1.0) samples prepared by ceramic route. Metal-insulator like transition observed depending on doping concentration. High dc resistivity of the present system is due to localization of polaronic charge carriers and the dc resistivity data, above respective TMI, fit well with Mott's variable range hopping, Arrhenius conduction mechanism, while a power law nature is followed below TMI. The charge transport mechanism is also revealed from the scaled ac conductivity and dielectric modulus spectrum. The MI transition is considered to be associated with polaron dissociation occurring little below polaron ordering (PO) temperature, TPO. The samples also indicate a cross-over from universal dielectric response (UDR) (f 105 Hz). This cross over as well as MI like transition temperature shift towards the lower temperature regime with increasing x.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::afef5d98450d5e11d6670a02a0b0ea49 https://doi.org/10.1016/j.physb.2013.01.012 Zobrazit plný text záznamu Full Text from ScienceDirect