Dual-Gate β-Ga2O3 Nanomembrane Transistors: Device Operation and Analytical Modeling

Autor:	Anumita Sengupta, Tarun Kanti Bhattacharyya, Gourab Dutta
Rok vydání:	2021
Předmět:	Acoustics and Ultrasonics Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Journal of Physics D: Applied Physics.
ISSN:	1361-6463 0022-3727
DOI:	10.1088/1361-6463/abf861
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::afe96c8896a019c0b74c719c5b68be34 https://doi.org/10.1088/1361-6463/abf861 Zobrazit plný text záznamu