p-GaN/n-Si HETEROJUNCTION PHOTODIODES
| Autor: | M. Hussein Mourad, H. Abu Hassan, Zainuriah Hassan, Lee Siang Chuah |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Photocurrent
Materials science business.industry Photodetector Heterojunction Surfaces and Interfaces Nanosecond Photoelectric effect Condensed Matter Physics medicine.disease_cause Surfaces Coatings and Films Photodiode law.invention Wavelength law Materials Chemistry medicine Optoelectronics business Ultraviolet |
| Zdroj: | Surface Review and Letters. 15:699-703 |
| ISSN: | 1793-6667 0218-625X |
| DOI: | 10.1142/s0218625x08011871 |
| Popis: | PN photodiodes, as an alternative form of photodetectors, is based on carrier production in the high-field junction region, and it has a response time considerably faster than that of a photoconductor and is typically in the order of nanoseconds. Photodetectors operating in the short wavelength ultraviolet (UV) region are important devices that can be used in various commercial and military applications. In the present work, we fabricated the p- GaN / n-Si heterojunction photodiode to observe the photoelectric effects. From the results, the current–voltage characteristics of the device show the typical rectifying behavior of heterojunctions. The UV photocurrent measurement was performed using an Hg -lamp under a reverse bias. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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