Realization of a temperature transducer by a standard polysilicon process
| Autor: | O. Zucker, J. Meyer, W. Langheinrich, M. Hierholzer |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Materials science
Dopant business.industry Thermistor Metals and Alloys Process (computing) Electrical engineering Condensed Matter Physics Computer Science::Other Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Transducer Electrical resistivity and conductivity law Optoelectronics Electrical and Electronic Engineering Resistor business Instrumentation Temperature coefficient Realization (systems) |
| Zdroj: | Sensors and Actuators A: Physical. 23:1015-1018 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/0924-4247(90)87080-3 |
| Popis: | The temperature coefficient (TC) of polysilicon resistivity depends on the concentration of the incorporated dopant. Thus it is possible to realize resistors with positive, negative or zero TC. The use of a parallel resistor is a simple method to linearize the characteristics of a thermistor. Necessarily the resistor must have a zero TC. By using two implantations (i.e., one for the thermistor and another for the parallel resistor) it is easy to design temperature transducers with linear characteristics within an appropriate temperature interval. Several sensors with different layouts have been realized and measured. As a result, the characteristics of the above-mentioned sensors depend on the concentration of the dopant, on the geometric layout of the sensor and on the measuring current. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|