New Generation of Z-RAM
| Autor: | Serguei Okhonin, Ray Beffa, Eric Carman, Mikhail Nagoga, E. Faraoni |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Magnetoresistive random-access memory
Hardware_MEMORYSTRUCTURES Sense amplifier Computer science Bipolar junction transistor Transistor Multiple-emitter transistor Hardware_PERFORMANCEANDRELIABILITY law.invention law Scalability Hardware_INTEGRATEDCIRCUITS Electronic engineering Z-RAM Dram Hardware_LOGICDESIGN |
| Zdroj: | 2007 IEEE International Electron Devices Meeting. |
| DOI: | 10.1109/iedm.2007.4419103 |
| Popis: | A new generation of the single transistor floating body DRAM is introduced for the first time. The new memory is largely based on the bipolar transistor existing in the MOS structure. The memory's main features are high margin, low-power consumption, and scalability. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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