High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition
| Autor: | Fernando Ponce, Archie L. Holmes, F. J. Ciuba, K. G. Fertitta, Russell D. Dupuis |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
business.industry Heterojunction Chemical vapor deposition Nitride Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Full width at half maximum Crystallography Materials Chemistry Sapphire Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Thin film business |
| Zdroj: | Journal of Electronic Materials. 24:257-261 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02659684 |
| Popis: | In this paper, we describe the growth and characterization of high-quality GaN heteroepitaxial films grown on basal-plane sapphire substrates using metalorganic chemical vapor deposition. The quality of these films is analyzed by a variety of methods, including high-resolution x-ray diffraction, optical transmission spectroscopy, transmission electron microscopy (TEM), room temperature photoluminescence, and room-temperature Hall measurements. The x-ray diffraction full width at half maximum value of ΔΘ ∼37 arc s is the narrowest reported to date for any III-V nitride film on any substrate. The x-ray rocking curves for ∼0.48 μm thick GaN/Al2O3 heteroepitaxial layers exhibit Pendellosung fringes, indicating that even relatively thin films can be of high quality. High-resolution TEM lattice images further attest to the excellent structural quality, showing the films to be completely free of stacking faults. Furthermore, no evidence of columnar growth is observed. |
| Databáze: | OpenAIRE |
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