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Textured MoTe 2 films have been prepared by sequential evaporation of the constituents followed by annealing under a tellurium pressure. The films are systematically textured with the c -axis of the crystallites perpendicular to the plane of substrate, however, the film composition is difficult to control and even after process optimization the films are tellurium deficient. This is thought to be caused by the electro negativity difference of the constituents. The textured MoTe 2 films have been used as substrates on which to grow MoS 2 films by annealing under a pressure of sulfur that allows textured MoS 2 films to be grown with good crystalline properties. The presence of sulfur at the surface and annealing under dynamic vacuum is important for this process and moreover, suppresses the superficial oxidation of the Mo and Te constituents. |
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