| Autor: |
Bae Kwang-Hyuk, Burm Jin-Wook, Park Hyun-Chang, Park Hoon, Park Jin-Kuk, Jung Ji-Hak, Song Nam-Jin, Shin Dong-Hyuk |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Journal of the Korean Physical Society. 40:588 |
| ISSN: |
0374-4884 |
| DOI: |
10.3938/jkps.40.588 |
| Popis: |
4H-SiC MESFET’s on conducting substrates were designed, fabricated, and DC characterized. An inductively coupled plasma etcher was developed and used for the channel recess etching of the MESFET. Fabricated MESFET’s with 1-μm gate lengths and 100-μm gate widths showed a very high drain current density of 980 mA/mm and a maximum transconductance of 35 mS/mm, indicating a high potential for microwave power applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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