Effect of Charge Transferring Materials on Photoluminescence Properties of CdSe/ZnS Quantum Dots

Autor: Xuan Lin Chen, Gui Fan Li, Yu Qiu Qu, Liu Yang Zhang, Hong Wei, Li Min An
Rok vydání: 2014
Předmět:
Zdroj: Advanced Materials Research. 981:879-882
ISSN: 1662-8985
DOI: 10.4028/www.scientific.net/amr.981.879
Popis: The CdSe/ZnS core/shell quantum dots (QDs) were synthesized and characterized with absorption spectrometry, photoluminescence (PL) spectrometry and transmission electron microscopy. PL quenching of colloidal CdSe/ZnS QDs in the presence of charge transferring material was studied by means of steady-state and time-resolved PL spectroscopy. With increasing charge transferring materials concentration in the CdSe/ZnS QDs solution, the PL intensity and lifetime of CdSe/ZnS QDs decrease gradually. The quenching efficiency of CdSe/ZnS QDs decrease with increasing the oxidation potential of charge transferring materials. Based on the analysis, there are two pathways in the PL quenching process: static quenching and dynamic quenching. The dynamic quenching is correlated with hole transfer from QDs to the charge transferring materials.
Databáze: OpenAIRE