Influence of La substitution on the electrical properties of metal–ferroelectric (BiFeO3)-insulator (CeO2)-semiconductor nonvolatile memory structures
| Autor: | Chih-Wei Hsu, Pi-Chun Juan, Ling-Yen Yeh, Chuan-Hsi Liu, Ming-Tsong Wang |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Dielectric Atmospheric temperature range Condensed Matter Physics Microstructure Ferroelectricity Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Non-volatile memory Semiconductor Optoelectronics Electrical and Electronic Engineering business High-resolution transmission electron microscopy |
| Zdroj: | Microelectronic Engineering. 88:1217-1220 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2011.03.043 |
| Popis: | Metal-multiferroic (La-substituted BiFeO"3)-insulator (CeO"2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La^3^+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700^oC, respectively. The microstructure and interfacial layer between CeO"2 and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9V under +/-6V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO"3 films were also studied by AFM. |
| Databáze: | OpenAIRE |
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