Low Work Function between Erbium Silicide and n-type Silicon Controlled by Cap Film Stress

Autor:	Tadahiro Ohmi, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa
Rok vydání:	2012
Předmět:	Stress (mechanics) Erbium chemistry.chemical_compound Materials science chemistry N type silicon Silicide Low work function chemistry.chemical_element Composite material
Zdroj:	ECS Transactions. 45:371-378
ISSN:	1938-6737 1938-5862
Popis:	The electrical and physical properties of W capped ErSix on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSix crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSix can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::af9dc5cb1a55e62d473a2a2620d1d6f2 https://doi.org/10.1149/1.3700902 Zobrazit plný text záznamu