Low Work Function between Erbium Silicide and n-type Silicon Controlled by Cap Film Stress
Autor: | Tadahiro Ohmi, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa |
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Rok vydání: | 2012 |
Předmět: | |
Zdroj: | ECS Transactions. 45:371-378 |
ISSN: | 1938-6737 1938-5862 |
Popis: | The electrical and physical properties of W capped ErSix on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSix crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSix can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation. |
Databáze: | OpenAIRE |
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