Autor:	Robert M. Panas, Martin L. Culpepper
Rok vydání:	2015
Předmět:	Materials science Silicon Condensed matter physics High Energy Physics::Phenomenology Doping chemistry.chemical_element Conductivity Omega Electronic Optical and Magnetic Materials Reduced properties chemistry Soldering Electronic engineering Wafer Electrical and Electronic Engineering Indium
Zdroj:	IEEE Transactions on Electron Devices. 62:1977-1983
ISSN:	1557-9646 0018-9383
Popis:	This paper provides engineering models of a simple and robust approach for creating electrical connections to silicon using reduced temperature ( $\approx 1\Omega $ -cm $^{2}$ for $\langle 110\rangle $ p-type wafers at $10^{17}$ cm $^{-3}$ doping.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::af8d62bb13f54effd1ca0985ab85b7f4 https://doi.org/10.1109/ted.2015.2421413 Zobrazit plný text záznamu