Silicon carbide MOSFET technology
| Autor: | Evan Downey, James W. Kretchmer, William Andrew Hennessy, D.M. Brown, Gerald J. Michon, Mario Ghezzo, V. Krishnamurthy |
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| Rok vydání: | 1996 |
| Předmět: |
Fabrication
Materials science business.industry Integrated circuit design Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Ion implantation Reliability (semiconductor) stomatognathic system chemistry law MOSFET Materials Chemistry Electronic engineering Operational amplifier Silicon carbide Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 39:1531-1542 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(96)00079-2 |
| Popis: | The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the world's first SiC analog IC—a monolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included: characterization of the SiCSiO2 interface using thermally grown oxides; high temperature (350°C) reliability studies of thermally grown oxides; ion implantation studies of donor (N) and acceptor (B) dopants to form junction diodes; epitaxial layer characterization; device isolation methods; and finally integrated circuit design, fabrication and testing of the world's first monolithic SiC operational amplifier IC. High temperature circuit drift instabilities at 350°C were characterized. These studies defined an SiC depletion model MOSFET IC technology and outlined tasks required to improve all types of SiC devices. |
| Databáze: | OpenAIRE |
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