Optimization of pitch-split double patterning phoresist for applications at the 16nm node

Autor:	Matthew E. Colburn, Steven J. Holmes, Brian Osborn, Sean D. Burns, Shinichiro Kawakami, David Hetzer, Sumanth Kini, Hideyuki Tomizawa, Nicolette Fender, Chiew-seng Koay, Karen Petrillo, John C. Arnold, Terry A. Spooner, Yunpeng Yin, Guillaume Landie, Rex Chen, Mark Slezak, Rao Varanasi, Scott Halle, Cherry Tang, Shyng-Tsong Chen, Jason Cantone, Sen Liu, Shannon Dunn, Lovejeet Singh
Rok vydání:	2011
Předmět:	Optics Fabrication Materials science Resist Computer Science::Sound business.industry Multiple patterning Process window Semiconductor device business Dark field microscopy Lithography Critical dimension
Zdroj:	2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
DOI:	10.1109/asmc.2011.5898203
Popis:	Pitch-split resist materials have been developed for the fabrication of sub-74 nm pitch semiconductor devices. A thermal cure method is used to enable patterning of a second layer of resist over the initially formed layer. Process window, critical dimension uniformity, defectivity and integration with fabricator applications have been explored. A tone inversion process has been developed to enable the application of pitch split to dark field applications in addition to standard bright field applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::af87b43e4bcb019c9a490910ebf0ba2b https://doi.org/10.1109/asmc.2011.5898203 Zobrazit plný text záznamu