High power GaAs∕AlGaAs lasers (λ∼850nm) with ultranarrow vertical beam divergence

Autor:	V. A. Shchukin, L. Ya. Karachinsky, Dieter Bimberg, N. Yu. Gordeev, T. Kettler, Yu. M. Shernyakov, P. S. Kop’ev, U. W. Pohl, S. M. Kuznetsov, N. N. Ledentsov, O. Schulz, U. Ben-Ami, Mikhail V. Maximov, A. Sharon, I. I. Novikov, K. Posilovic, D. B. Arbiv
Rok vydání:	2006
Předmět:	Physics Physics and Astronomy (miscellaneous) business.industry Single-mode optical fiber Physics::Optics Laser Semiconductor laser theory law.invention Full width at half maximum Optics law Optoelectronics Continuous wave Photonics business Beam divergence Photonic crystal
Zdroj:	Applied Physics Letters. 89:231114
ISSN:	1077-3118 0003-6951
Popis:	The authors study 850nm GaAs∕AlGaAs longitudinal photonic band crystal lasers with a vertical far field divergence of 9° (full width at half maximum). Differential quantum efficiency of 95% is achieved at a cavity length of 500μm. A total optical output power from broad area multimode devices was up to 6.3W and a maximum continuous wave single mode power from narrow stripe devices was 270mW.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::af86fef82b70a3ba49d34be82430ea39 https://doi.org/10.1063/1.2403906 Zobrazit plný text záznamu