| Autor: |
T.P. Chin, D.C. Streit, D. Yamauchi, M. Nishimoto, V. Medvedev, Ronald W. Grundbacher, Richard Lai, G. Schreyer, Y.C. Chen, T.R. Block |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362). |
| Popis: |
We present state-of-the-art V-band power added efficiency (PAE) and power performance of 0.15 /spl mu/m gate length InGaAs-InAlAs-InP HEMTs. The 500 /spl mu/m wide InP HEMTs were measured in a fixture under CW conditions at 60 GHz and demonstrated 36% PAE with an output power of 186 mW (22.7 dBm) at an input power of 17 dBm. These results represent the best combination of PAE and output power reported to date at this frequency for any solid state device. The results are attributed to an optimization of the heterostructure, which includes a graded channel, a graded Schottky barrier layer, and a depleted highly doped cap layer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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