| Autor: |
Ngwe Zin, Winston V. Schoenfeld, Ismail Kashkoush, Munan Gao |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). |
| DOI: |
10.1109/pvsc43889.2021.9518666 |
| Popis: |
We experimentally proved an effective use of UV-ozone oxide layer in junction passivation and current tunneling applications of crystalline silicon (c-Si) solar cells. The UV-ozone generated oxide layer can improve the passivation quality of aluminum oxide(AlO x ) when inserted between the silicon wafer surface and atomic layer deposited(ALD) AlO x . When tested on junctions that moderately diffused by phosphorus and boron (sheet resistance R sh ~110 Ω/□), the UV-ozone oxide and AlO x stack resulted in a J 0 no more than 12fA/cm2. The same oxide layer is also considered as a passivating contact material. When applied as an interlayer between diffused silicon surface and aluminum contact, the passivated contact structure realized a contact resistivity (ρ c ) of ~ 1mΩ-cm2 and ~ 25mΩ-cm2 for boron and phosphorus passivating contact structures, respectively, with moderately doped diffusions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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