Autor:	K. J. Smirnov, Y. V. Batov, V. V. Davydov
Rok vydání:	2019
Předmět:	History Materials science business.industry Optoelectronics Photodetector business Photocathode Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 1368:022073
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/1368/2/022073
Popis:	The technology of creation the photocathode with quantum efficiency at the level of 5% based on the InP/InGaAs heterostructures is given. The effect of decreasing the quantum efficiency of the photosensitive structure on radiant sensitivity is considered. Several variants of realization of vacuum photoelectronic device with InP/InGaAs photocathode for special purposes are represented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::af77995b4d8d29cd4934973e80c0770b https://doi.org/10.1088/1742-6596/1368/2/022073 Zobrazit plný text záznamu