Ferroelectric Properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si Structures

Autor:	Shuichiro Ohara, Hiroshi Ishiwara, Koji Aizawa
Rok vydání:	2005
Předmět:	Materials science business.industry General Engineering General Physics and Astronomy Dielectric Coercivity Ferroelectricity law.invention Capacitor law Optoelectronics Thin film business Polarization (electrochemistry) Sol-gel Diode
Zdroj:	Japanese Journal of Applied Physics. 44:6644
ISSN:	1347-4065 0021-4922
Popis:	The ferroelectric properties of metal–ferroelectric–metal (MFM) capacitors with a Pt/Pb5Ge3O11(PGO)/Pt structure and metal–ferroelectric–insulator–semiconductor (MFIS) diodes with a Pt/PGO/HfO2/Si structure were investigated. C-axis-oriented PGO thin films were formed on both Pt/SiO2/Si and HfO2 (6 nm)/Si structures by a sol–gel method. Typical values of remanent polarization (2P r), coercive field (2E c), and dielectric constant in the MFM capacitors were 5.7 µC/cm2, 63 kV/cm, and 50, respectively, and the remanent polarization gradually increased with the switching pulses for up to 1 ×1010 cycles. It was also found that the memory window in the MFIS diodes with a 340-nm-thick PGO film was as large as 1.3 V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::af60c87a1f2d62cb39792bc77aab93d1 https://doi.org/10.1143/jjap.44.6644 Zobrazit plný text záznamu