Growth of Hg1−Cd Te epitaxial layers on (100) CdTe by chemical vapor transport under normal and reduced gravity conditions

Autor:	Yu-Ru Ge, Yi-Gao Sha, Heribert Wiedemeier, Mark A. Hutchins
Rok vydání:	1995
Předmět:	Electron mobility Transport agent Reduced Gravity Chemistry Analytical chemistry Mineralogy Condensed Matter Physics Epitaxy Cadmium telluride photovoltaics Ampoule Inorganic Chemistry Crystallinity Homogeneity (physics) Materials Chemistry
Zdroj:	Journal of Crystal Growth. 146:610-618
ISSN:	0022-0248
DOI:	10.1016/0022-0248(94)00578-8
Popis:	Chemical vapor transport (CVT) growth of Hg 1− x Cd x Te epitaxial layers on (100) CdTe substrates, using HgI 2 as a transport agent, was performed in closed ampoules under normal and microgravity conditions during the USML-1 flight. The surface morphology, compositional homogeneity, single crystallinity, and carrier mobility of the epitaxial layers grown in microgravity are considerably improved relative to layers grown on ground. These differences demonstrate the effects of convective flow on the transport and deposition processes of this solid-vapor transport system. The properties of the Hg 1− x Cd x Te layers grown in microgravity environment compare quite favorably to those of layers obtained by other techniques.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::af582f87187c9ff3545312f51de95c79 https://doi.org/10.1016/0022-0248(94)00578-8 Zobrazit plný text záznamu Full Text from ScienceDirect