Comparative study of low energy ion beam oxidation of Si(100), Ge/Si(100) and
| Autor: | O. Vancauwenberghe, H. Herbots, W. J. Tan, O. C. Hellman, W. J. Croft, J. L. Olson |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
Silicon Ion beam Scanning electron microscope Mechanical Engineering Alloy Analytical chemistry chemistry.chemical_element Germanium engineering.material Condensed Matter Physics Ion chemistry Mechanics of Materials engineering General Materials Science Thin film Atomic physics Molecular beam epitaxy |
| Zdroj: | Materials Science and Engineering: B. 12:97-101 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(92)90266-c |
| Popis: | Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si1−xGex grown by molecular beam epitaxy on Si(100) was investigated at room temperature using 18O2+ ion beams with energies E ion ranging from 100 eV to 1 keV. The dependence of phase formation and film properties upon ion energy was established. In the case of silicon, thin films of stoichiometric SiO2 are formed at each energy studied and their thickness increases from 39 to 70 A with increasing E ion . Insulating GeO2 can only be formed for E ion ⩽ 200 eV . Under IBO, both silicon and germanium in Si0.8 Ge0.2 are fully oxidized. At each energy investigated, thin SiGe dioxide films are formed and found to be insulating by scanning electron microscopy. This contrasts with IBO of elemental germanium and shows that the presence of silicon surrounding the germanium in the SiGe alloy enhances the oxidation of germanium under IBO. |
| Databáze: | OpenAIRE |
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