Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

Autor:	Shunsuke Oba, Takanobu Watanabe, Kouta Takahashi, Shuichiro Hashimoto, Motohiro Tomita, Masashi Kurosawa, Takuya Terada, Masataka Ogasawara
Rok vydání:	2018
Předmět:	chemistry.chemical_compound Cooling rate Materials science Thermal conductivity Thermoelectric cooling chemistry Thermoelectric effect Composite material Conductivity Temperature measurement Silicon-germanium
Zdroj:	2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
DOI:	10.1109/edtm.2018.8421517
Popis:	We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::af47a05dd94597414e06813ac4777ada https://doi.org/10.1109/edtm.2018.8421517 Zobrazit plný text záznamu