Some Observations of the Effect of Porous Silicon on Oxidation‐Induced Stacking Faults
| Autor: | S. Y. Shieh, James Evans |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Nucleation Stacking Mineralogy Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Condensed Matter Physics Porous silicon GeneralLiterature_MISCELLANEOUS Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Impurity Getter law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Electrochemistry Wafer Composite material |
| Zdroj: | Journal of The Electrochemical Society. 140:1094-1096 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2056204 |
| Popis: | Experiments have been carried out to determine the influence of a porous silicon patch (located on the back surface of a silicon wafer) on the formation of stacking faults during oxidation typically encountered in the manufacture of integrated circuits. The porous silicon was found to reduce the incidence of stacking faults. A possible explanation is that the porous silicon serves as a gettering center which reduces the number of impurity clusters that would otherwise nucleate stacking faults |
| Databáze: | OpenAIRE |
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