Effects of Deliberate Metal Contamination on CCD Imagers

Autor:	J. Kyan, David Newell Nichols, James P. Lavine, Charles V. Stancampiano, J. B. Russell, William C. McColgin
Rok vydání:	1992
Předmět:	Fabrication Materials science Silicon business.industry chemistry.chemical_element Copper Nickel Transition metal chemistry Getter Optoelectronics Wafer business Cobalt
Zdroj:	MRS Proceedings. 262
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-262-769
Popis:	The effects of intentional metal contamination on silicon charge-coupled device imagers are reported. Such imagers are both sensitive to and provide sensitive measures of the presence of metals in the fabrication process. High-purity iron, cobalt, nickel, copper, palladium, and gold were deliberately introduced into the device wafers just before the last high temperature step. Metals were found to cause both electrical defects and distinctive imaging defects.We find that transition metals can be effectively removed from device regions by internal gettering, but that this gettering can be defeated by a fast cool-down. Gold, however, is poorly gettered.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::af2737437650848c4dfc05c5f1c8d3b2 https://doi.org/10.1557/proc-262-769 Zobrazit plný text záznamu Full text from SpringerLink