Self-organized (553)BIn0.15Ga0.85As/GaAs quantum-wire field-effect transistors
| Autor: | Shi-Young Liu, Wen-Jun Zhang, Rong-Gui Zhang, Chun-Guang Liang, Wei-Ji Liu, Fa-Wang Yan, Xian-Jie Li, Jin-Ping Ao |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Photoluminescence Physics and Astronomy (miscellaneous) Condensed matter physics business.industry Quantum wire Transconductance Epitaxy Gallium arsenide Full width at half maximum chemistry.chemical_compound chemistry Optoelectronics Field-effect transistor business Saturation (magnetic) |
| Zdroj: | Applied Physics Letters. 78:2793-2795 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1365949 |
| Popis: | Extremely uniform and high-density In0.15Ga0.85As/GaAs quantum wires (QWRs) were naturally formed on a (553)B-oriented GaAs substrate by molecular-beam epitaxy. The density of the QWRs is as high as 4.0×105 cm−1. The strong photoluminescence peak at λ=868 nm from the (553)B QWRs shows a large polarization anisotropy [p=(I∥−I⊥)/(I∥+I⊥)=0.22] and a very small full width at half maximum of 9.2 meV at 12 K. Based on the modulation-doped (553)B QWR structure, self-organized QWR field-effect transistors were fabricated (the channel along the QWRs’ direction). The devices demonstrate very good saturation characteristics and pinch-off behavior at room temperature. A maximum transconductance (gm) of 135 mS/mm is measured for 2 μm gate-length devices. |
| Databáze: | OpenAIRE |
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