A THz-range planar NDR device utilizing ballistic electron acceleration in GaN
| Autor: | Lester F. Eastman, Barbaros Aslan |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Range (particle radiation)
Materials science Terahertz radiation Phonon business.industry Gallium nitride Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Electron acceleration Optics Planar chemistry Ballistic conduction Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | Solid-State Electronics. 64:57-62 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2011.06.044 |
| Popis: | A planar and ultra-short gallium nitride (GaN) diode structure is investigated as a potential Terahertz (THz) range negative differential resistance (NDR) diode. An empirical velocity-field relation, exhibiting a peak electron velocity as high as 7 × 10 7 cm/s, is employed to characterize the high-field transport in the simulations, accounting for ballistic electron acceleration and velocity reduction due to phonon build up. The resulting device operation is in accumulation-layer transit-time mode and large-signal circuit simulation results are reported along with discussions. Conversion efficiencies up to ∼3.4% at ∼1.5 THz are shown to be possible. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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