Characterization of the Si : Se+ Spin-Photon Interface
| Autor: | Nikolay V. Abrosimov, Helge Riemann, Rohan J. S. Abraham, Peter B. Becker, Mike L. W. Thewalt, Stephanie Simmons, K. J. Morse, Hans-Joachim Pohl, Camille Bowness, Adam DeAbreu, Alzbeta Medvedova |
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| Rok vydání: | 2019 |
| Předmět: |
Physics
Photon Silicon Doping Transition dipole moment General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Magnetic field chemistry Excited state 0103 physical sciences Condensed Matter::Strongly Correlated Electrons Quantum information Atomic physics 010306 general physics 0210 nano-technology Spin-½ |
| Zdroj: | Physical Review Applied. 11 |
| ISSN: | 2331-7019 |
| Popis: | Silicon doped with Se${}^{+}$ is particularly compelling as a spin-photon interface, because it could be the basis of all-silicon, hybrid spin-photon quantum information technology. This study pins down the most critical spin-photon properties of Si:Se${}^{+}$: the transition dipole moment of the spin-dependent optical transition, the radiative efficiency of the first excited state, and the zero-phonon emission fraction. The authors also measure a long ${T}_{1}$ spin lifetime in Earth's magnetic field of over 4.6 hours. Taken together, these favorable results indicate that an integrated quantum optoelectronic platform based on Si:Se+ is well within reach of current integrated photonic capabilities. |
| Databáze: | OpenAIRE |
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