The characteristics of the gallium-doped zinc oxide films using radio frequency magnetron sputtering
| Autor: | Chia-Ching Wu, Jun Zhi Wang, Chih-Chin Yang, Chia-Hon Chen |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping chemistry.chemical_element 02 engineering and technology Substrate (electronics) Zinc Sputter deposition 021001 nanoscience & nanotechnology 01 natural sciences Crystal chemistry Sputtering 0103 physical sciences Optoelectronics Thin film Gallium 0210 nano-technology business |
| Zdroj: | 2018 7th International Symposium on Next Generation Electronics (ISNE). |
| DOI: | 10.1109/isne.2018.8394654 |
| Popis: | Transparent conductive gallium-doped zinc oxide (GZO) thin films with different deposition power (from 75 to 150 W) were prepared on the Coring glass substrate by using R.F. magnetron sputtering method. The resulting GZO thin films were crystalline, displaying a hexagonal wurtzite-type crystal structure with a preferred grain orientation in the (002) direction. The best FOM was obtained at 125 W. |
| Databáze: | OpenAIRE |
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