Residual arsenic site in oxidized AlxGa1−xAs (x=0.96)

Autor:	G. Kramer, Bruce A. Bunker, G. L. Snider, Douglas C. Hall, C. B. DeMelo, Tomohiro Shibata, Seong-Kyun Cheong, N. El-Zein, Y. Luo
Rok vydání:	2001
Předmět:	Aluminium oxides X-ray absorption spectroscopy Physics and Astronomy (miscellaneous) Extended X-ray absorption fine structure Absorption spectroscopy Chemistry Inorganic chemistry chemistry.chemical_element Absorption (chemistry) Spectroscopy Crystallographic defect Arsenic
Zdroj:	Applied Physics Letters. 78:2458-2460
ISSN:	1077-3118 0003-6951
Popis:	X-ray absorption fine-structure spectroscopy is used to determine the site of residual As in wet-oxidized Al0.96Ga0.04As. In a ∼0.5-μm-oxide film removed from its GaAs substrate, the remaining As atoms are found to be coordinated with oxygen in the form of amorphous-As oxides, with a mixture of ∼80% As3+ and ∼20% As5+ sites that are locally similar to As2O3 and As2O5. No evidence of interstitial or substitutional As, As precipitates, or GaAs is seen, implying that less than 10% of the As atoms are in these forms.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aefe991256201aea67f0737c04e4fc2d https://doi.org/10.1063/1.1367307 Zobrazit plný text záznamu