Low‐temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge

Autor:	M. M. Moslehi, C. Y. Fu, T. W. Sigmon, K. C. Saraswat
Rok vydání:	1985
Předmět:	Materials science Silicon business.industry General Physics and Astronomy chemistry.chemical_element Plasma chemistry Electrode Optoelectronics Wafer LOCOS Voltage source Thin film business Microwave
Zdroj:	Journal of Applied Physics. 58:2416-2419
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.335915
Popis:	A process utilizing a microwave discharge technique for performing direct nitridation of silicon at a relatively low growth temperature of no more than about 500° C. in a nitrogen plasma ambient without the presence of hydrogen or a fluorine-containing species. Nitrogen is introduced through a quartz tube. A silicon rod connected to a voltage source is placed in the quartz tube and functions as an anodization electrode. The silicon wafer to be treated is connected to a second voltage source and functions as the second electrode of the anodizing circuit. A small DC voltage is applied to the silicon wafer to make the plasma current at the wafer and the silicon rod equal and minimize contamination of the film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aef8d520f13d63204a2ba8a2b271f2f2 https://doi.org/10.1063/1.335915 Zobrazit plný text záznamu