Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses
| Autor: | L. V. Katsoev, É. A. Il’ichev, V. V. Katsoev |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Physics
Physics::Instrumentation and Detectors business.industry Detector Function (mathematics) Condensed Matter Physics Atomic and Molecular Physics and Optics Charged particle Electronic Optical and Magnetic Materials Semiconductor detector Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Current (fluid) business Recombination Voltage |
| Zdroj: | Semiconductors. 43:1667-1670 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782609130119 |
| Popis: | The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. The model makes it possible to calculate the output current of the detector as a function of its active-region’s thickness and the voltage applied across the sensor under conditions of the presence of recombination processes. |
| Databáze: | OpenAIRE |
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