Experimental and theoretical electrical characteristics of metal-SIPOS-n-p+structures
| Autor: | M J B Bolt, C Zimmerman, G W Taylor, J G Simmons |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Condensed matter physics
Chemistry Mineralogy Function (mathematics) Condensed Matter Physics Ray Electronic Optical and Magnetic Materials Metal Light intensity visual_art Materials Chemistry visual_art.visual_art_medium Electrical and Electronic Engineering Current (fluid) Device parameters Voltage |
| Zdroj: | Semiconductor Science and Technology. 2:666-674 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | The electrical characteristics of the metal-insulator-semiconductor switch (MISS), in which SIPOS is incorporated as the semi-insulator, are presented. The variations of the device characteristics with temperature and light intensity are reported. A theoretical model for the metal-SIPOS-n-p+ structure is proposed. The model enables the electrical characteristics of the device and their variation with device parameters to be analysed. Good qualitative correlation is observed between experiment and theory. In particular, the variation of switching voltage and current and holding voltage and current as a function of temperature and incident light are shown to correlate reasonably well. |
| Databáze: | OpenAIRE |
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